Scrubber, ALD process system including the scrubber and method for fabricating semiconductor device using the scrubber
US12290778B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Nov 28, 2021 |
| Grant date | May 6, 2025 |
| Priority date | — |
| Expiry date | Sep 6, 2043 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB01D2279/51
- WIPO fieldChemical engineering
- WIPO sectorChemistry
Abstract
A method of fabricating a semiconductor device includes providing a wafer inside a process chamber, performing an ALD (atomic layer deposition) process inside the process chamber to deposit titanium nitride on the wafer, providing a process gas used for the ALD process to a scrubber, filtering a first powder contained in the process gas, using a filter unit disposed in the scrubber and including a plurality of filters, adsorbing a second powder remaining in the process gas after passing through the filter unit, using a fin structure extending in a vertical direction inside the filter unit, and exhausting the process gas, from which the first and second powders are removed, from the scrubber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.