Gas sensor device with high sensitivity at low temperature and method of fabrication thereof
US12292427B2 · kind B2 · utility
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5Claims
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Key dates
| Filing date | Sep 19, 2018 |
| Grant date | May 6, 2025 |
| Priority date | — |
| Expiry date | Jan 4, 2040 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB82Y40/00
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method for producing a gas sensor comprising a step of providing a substrate with two coplanar electrodes and a step of forming a ZnO nanowires network on the two electrode. The step of forming a ZnO nanowires network on the two electrodes is performed as follows: synthesizing ZnO nanowires with a liquid phase sequential growth method; dispersing the synthetized nanowires in a solvent; drop casting the solution containing the solvent and the ZnO nanowires on the electrodes; drying the solution at a temperature inferior to 85° C. Also, a gas sensor working at low temperature such as room temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.