Method for measuring an external magnetic field by at least one magnetic memory point
US12292486B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 24, 2021 |
| Grant date | May 6, 2025 |
| Priority date | — |
| Expiry date | Dec 27, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/20
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method for measuring the intensity of an external magnetic field by using a magnetic memory point including a storage layer having a magnetisation switchable between two magnetisation directions substantially perpendicular to the plane of the layer; a reference layer having a fixed magnetisation perpendicular to the plane of the layer; and a tunnel barrier layer separating the storage layer and the reference layer; the method including successively applying a plurality of currents or voltages of different amplitudes to the memory point until switching of the magnetisation direction of the storage layer takes place to determine a minimum switching current value of the magnetisation direction of the storage layer or a minimum switching voltage value of the magnetisation direction of the storage layer, and determining the intensity of the external magnetic field to be measured from the minimum switching current value or the minimum switching voltage value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.