Ricardo Sousa
21Patents
5h-index
29Co-inventors
65Inventor score
Filing activity: Feb 23, 2005 → Mar 7, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8279666B2 | Spin polarised magnetic device | Electricity | 124 | Active |
| US8609439B2 | Magnetic tunnel junction comprising a polarizing layer | Electricity | 42 | Active |
| US7411817B2 | Magnetic memory with a magnetic tunnel junction written in a thermally assisted manner, and method for writing the same | Physics | 36 | Active |
| US7898833B2 | Magnetic element with thermally-assisted writing | Electricity | 9 | Active |
| US7957181B2 | Magnetic tunnel junction magnetic memory | Emerging Cross-Sectional Technologies | 6 | Active |
| US7480175B2 | Magnetic tunnel junction device and writing/reading for said device | Electricity | 5 | Active |
| US10978234B2 | Magnetic stack, multilayer, tunnel junction, memory point and sensor comprising such a stack | Electricity | 5 | Active |
| US9396782B2 | Method for writing to a random access memory (MRAM) cell with improved MRAM cell lifespan | Physics | 2 | Active |
| US8947916B2 | Thermally assisted magnetic writing device | Electricity | 1 | Active |
| US10818329B2 | Magnetic tunnel junction with perpendicular shape anisotropy and minimised variation of temperature memory point and logic element including the magnetic tunnel junction, method of manufacturing the magnetic tunnel junction | Electricity | 1 | Active |
| US10658574B2 | Synthetic antiferromagnetic layer, magnetic tunnel junction and spintronic device using said synthetic antiferromagnetic layer | Electricity | 1 | Active |
| US8958240B2 | Magnetic device with thermally-assisted switching | Physics | 1 | Active |
| US10930841B2 | Magnetic tunnel junction with perpendicular shape anisotropy and minimised variability, memory point and logic element including the magnetic tunnel junction, method for manufacturing the magnetic tunnel junction | Electricity | 0 | Active |
| US12292486B2 | Method for measuring an external magnetic field by at least one magnetic memory point | Electricity | 0 | Active |
| US12100437B2 | Magnetic tunnel junction comprising an inhomogeneous granular free layer and associated spintronic devices | Performing Operations; Transporting | 0 | Active |
| US9455012B2 | Magnetic device with spin polarisation | Electricity | 0 | Active |
| US7626221B2 | Magnetoresistive random access memory with high current density | Physics | 0 | Expired |
| US11139099B2 | Magnetic field generator | Physics | 0 | Active |
| US12046268B2 | Cryogenic magnetic device more particularly for logic component or memory | Physics | 0 | Active |
| US8971102B2 | MRAM cell and method for writing to the MRAM cell using a thermally assisted write operation with a reduced field current | Physics | 0 | Active |
| US11856140B2 | Predictive communications system | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.