Semiconductor structure and manufacturing method thereof
US12292686B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 28, 2021 |
| Grant date | May 6, 2025 |
| Priority date | — |
| Expiry date | Mar 6, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0274
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of manufacturing a semiconductor structure includes providing a mask including a first substrate; a first mask layer disposed over the first substrate, including a plurality of first recesses extended through the first mask layer; a second mask layer disposed over the first mask layer and including a plurality of second recesses extended through the second mask layer; providing a second substrate including a photoresist disposed over the second substrate; and projecting a predetermined electromagnetic radiation through the mask towards the photoresist, wherein the first mask layer is at least partially transparent to the predetermined electromagnetic radiation, the second mask layer is opaque to the predetermined electromagnetic radiation, and at least a portion of the second mask layer is disposed between two of the plurality of second recesses.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.