Device with two superposed electrostatic control gate levels
US12293257B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 9, 2022 |
| Grant date | May 6, 2025 |
| Priority date | — |
| Expiry date | Oct 6, 2043 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB82Y10/00
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A quantum device, includes a semiconductor portion comprising several first quantum dot regions each disposed between at least two second tunnel barrier regions and placed next to the two second regions; first gates each comprising a first conductive portion; and second gates each comprising at least a second conductive portion and a second dielectric disposed between the second conductive portion and the first conductive portion of one of the first gates, such that each of the first gates is disposed between the semi-conductor portion and one of the second gates. The first and second gates are disposed above the first regions or above the second regions, the second gates being solely located in a vertical extension of the first gates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.