Semiconductor device having doped epitaxial region and its methods of fabrication
US12294027B2 · kind B2 · utility
0Cited by
9References
13Claims
0Family size
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Key dates
| Filing date | Jan 8, 2024 |
| Grant date | May 6, 2025 |
| Priority date | — |
| Expiry date | Jan 8, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/665
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the present invention describe a epitaxial region on a semiconductor device. In one embodiment, the epitaxial region is deposited onto a substrate via cyclical deposition-etch process. Cavities created underneath the spacer during the cyclical deposition-etch process are backfilled by an epitaxial cap layer. The epitaxial region and epitaxial cap layer improves electron mobility at the channel region, reduces short channel effects and decreases parasitic resistance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.