High ruggedness heterojunction bipolar transistor (HBT)
US12295152B2 · kind B2 · utility
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2References
19Claims
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Key dates
| Filing date | Feb 10, 2024 |
| Grant date | May 6, 2025 |
| Priority date | — |
| Expiry date | Feb 10, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2223/6644
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Provided is a high ruggedness heterojunction bipolar transistor (HBT), including a substrate, a sub-collector layer, collector layer, a base layer, and an emitter layer. The collector layer includes a InGaP layer or a wide bandgap layer. The collector layer includes III-V semiconductor material. The bandgap of the wide bandgap layer is greater than that of GaAs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.