Phase change memory
US12295272B2 · kind B2 · utility
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19Claims
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Key dates
| Filing date | Jun 22, 2022 |
| Grant date | May 6, 2025 |
| Priority date | — |
| Expiry date | Jul 8, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for making a phase change memory includes a step of forming an array of phase change memory cells, with each cell being separated from neighboring cells in the same line of the array and from neighboring cells in the same column of the array, by the same first distance. The method further includes a step of etching one memory cell out of N, with N being at least equal to 2, in each line or each column.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.