Metal chalcogenide film and method and device for manufacturing the same
US12297532B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jun 9, 2023 |
| Grant date | May 13, 2025 |
| Priority date | — |
| Expiry date | Jun 19, 2043 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB22F2302/45
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Provided are a metal chalcogenide thin film and a method and device for manufacturing the same. The metal chalcogenide thin film includes a transition metal element and a chalcogen element, and at least one of the transition metal element and the chalcogen element having a composition gradient along the surface of the metal chalcogenide thin film, the composition gradient being an in-plane composition gradient. The metal chalcogenide thin film may be prepared by using a manufacturing method including providing a transition metal precursor and a chalcogen precursor on a substrate by using a confined reaction space in such a manner that at least one of the transition metal precursor and the chalcogen precursor forms a concentration gradient according to a position on the surface of the substrate; and heat-treating the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.