Isolation structure for preventing unintentional merging of epitaxially grown source/drain
US12300698B2 · kind B2 · utility
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17References
20Claims
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Key dates
| Filing date | Jul 19, 2023 |
| Grant date | May 13, 2025 |
| Priority date | — |
| Expiry date | Jul 19, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0186
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a first active region and a second active region disposed over a substrate. A first source/drain component is grown on the first active region. A second source/drain component is grown on the second active region. An interlayer dielectric (ILD) is disposed around the first source/drain component and the second source/drain component. An isolation structure extends vertically through the ILD. The isolation structure separates the first source/drain component from the second source/drain component.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.