Lateral diffusion metal-oxide semiconductor device
US12300748B2 · kind B2 · utility
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Key dates
| Filing date | Dec 5, 2023 |
| Grant date | May 13, 2025 |
| Priority date | — |
| Expiry date | Dec 5, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/127
Abstract
A lateral diffusion metal-oxide semiconductor (LDMOS) device includes a first gate structure and a second gate structure extending along a first direction on a substrate, a first source region extending along the first direction on one side of the first gate structure, a second source region extending along the first direction on one side of the second gate structure, a drain region extending along the first direction between the first gate structure and the second gate structure, a guard ring surrounding the first gate structure and the second gate structure, and a shallow trench isolation (STI) surrounding the guard ring.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.