Three-dimensional memory and method for manufacturing the same
US12302559B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 24, 2022 |
| Grant date | May 13, 2025 |
| Priority date | — |
| Expiry date | Feb 17, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/50
Abstract
The present disclosure relates to a three-dimensional memory and a method for manufacturing the same. The three-dimensional memory includes a gate stack structure including a core area and a step area which are disposed in juxtaposition and in direct contact in a first direction; a dummy separation structure penetrating through the step area in the first direction; and a gate separation structure penetrating through the core area in the first direction, the gate separation structure having a first end in contact with the dummy separation structure in the first direction, the dummy separation structure having a second end in contact with the gate separation structure in the first direction, and the first end being located within the second end.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.