Three-dimensional memory device with divided drain select gate lines and method for forming the same

US12302560B2 · kind B2 · utility

Assignee

• YANGTZE MEMORY TECHNOLOGIES CO., LTD. · CN

Inventors

• Di Wang · Timonium, US
• Yan Gu · Singapore, SG
• Zhiliang Xia · 红钢城街道, CN
• Wenxi Zhou · 红钢城街道, CN
• Zongliang Huo · 红钢城街道, CN

Key dates

• Filing date: Jan 4, 2022
• Grant date: May 13, 2025
• Expiry date: Nov 12, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/679

Abstract

A memory device includes a stack structure over a substrate, a channel structure extending in the stack structure, and a dielectric layer over the channel structure. The dielectric layer includes a first material. The memory device may also include a drain-select gate (DSG) cut structure extending through the dielectric layer. The DSG cut structure includes a second material different from the first material.