Wide band gap semiconductor electronic device having a junction-barrier Schottky diode
US12302624B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 15, 2024 |
| Grant date | May 13, 2025 |
| Priority date | — |
| Expiry date | Feb 15, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The vertical-conduction electronic power device is formed by a body of wide band gap semiconductor which has a first conductivity type and has a surface, and is formed by a drift region and by a plurality of surface portions delimited by the surface. The electronic device is further formed by a plurality of first implanted regions having a second conductivity type, which extend into the drift region from the surface, and by a plurality of metal portions, which are arranged on the surface. Each metal portion is in Schottky contact with a respective surface portion of the plurality of surface portions so as to form a plurality of Schottky diodes formed by first Schottky diodes and second Schottky diodes, wherein the first Schottky diodes have, at equilibrium, a Schottky barrier having a height different from that of the second Schottky diodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.