Laser-cutting using selective polarization
US12304002B2 · kind B2 · utility
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6Claims
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Key dates
| Filing date | Sep 23, 2021 |
| Grant date | May 20, 2025 |
| Priority date | — |
| Expiry date | Mar 13, 2044 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB23K2103/56
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A method of cutting a semiconductor wafer by selectively controlling and utilising the polarization of incident laser beam or beams that includes irradiating the semiconductor wafer with laser light having a first polarization state, and subsequently irradiating the semiconductor wafer with laser light having a second polarization state, the second polarization state being different from the first polarization state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.