Silylcyclodisilazane compound and method for manufacturing silicon-containing thin film using the same
US12304924B2 · kind B2 · utility
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Key dates
| Filing date | Aug 13, 2020 |
| Grant date | May 20, 2025 |
| Priority date | — |
| Expiry date | Jan 2, 2042 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45553
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Provided is a novel silylcyclodisilazane compound, a composition for depositing a silicon-containing thin film containing the same, and a method for manufacturing the silicon-containing thin film using the same, and since the silylcyclodisilazane compound of the present disclosure has high reactivity, thermal stability and high volatility, it can be used as a silicon-containing precursor, thereby manufacturing a high-quality silicon-containing thin film by various deposition methods.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.