CMP slurry composition for polishing polycrystalline silicon and polishing method using same
US12305079B2 · kind B2 · utility
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12Claims
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Key dates
| Filing date | Nov 18, 2019 |
| Grant date | May 20, 2025 |
| Priority date | — |
| Expiry date | Mar 6, 2042 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB82Y40/00
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
The present disclosure relates to a CMP slurry composition for polishing polycrystalline silicon and a polishing method using the same. A CMP slurry composition for polishing polycrystalline silicon according to an embodiment of the present disclosure includes: abrasive particles; a surface roughness reducing agent; a polishing regulator containing an organic acid; and a pH regulator.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.