Methods for processing semiconductor wafers having a polycrystalline finish
US12308247B2 · kind B2 · utility
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16References
5Claims
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Key dates
| Filing date | Apr 19, 2021 |
| Grant date | May 20, 2025 |
| Priority date | — |
| Expiry date | Apr 30, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02595
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of processing a semiconductor wafer includes depositing a silicon layer on the semiconductor wafer. A first slurry is applied to the semiconductor wafer and the silicon layer is polished to smooth the silicon layer. A second slurry is applied to the semiconductor wafer. The second slurry includes a greater amount of a caustic agent than the first slurry.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.