Interconnect structure and method for manufacturing the interconnect structure
US12308312B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 24, 2023 |
| Grant date | May 20, 2025 |
| Priority date | — |
| Expiry date | Apr 24, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76855
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides an interconnect structure and a method for forming an interconnect structure. The method for forming an interconnect structure includes forming a first interlayer dielectric (ILD) layer over a substrate, forming a contact in the first ILD layer, forming a second ILD layer over the first ILD layer, forming a first opening in the second ILD layer and obtaining an exposed side surface of the second ILD layer over the contact, forming a densified dielectric layer at the exposed side surface of the second ILD layer, including oxidizing the exposed side surface of the second ILD layer by irradiating a microwave on the second ILD layer, and forming a via in contact with the densified dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.