Optoelectronic device with transition areas
US12308373B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 27, 2023 |
| Grant date | May 20, 2025 |
| Priority date | — |
| Expiry date | Jun 27, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/872
Abstract
An optoelectronic device including a first LED forming a first active structure and including first nanowires having first diameters φ1 such that 0.9·φ10<φ1<1,1·φ10 with φ10 a target value of the first diameters, the first nanowires being arranged according to at least one first array with a step p1, said first LED being configured to emit a first light beam having mainly a first wavelength λ1, and a first transition area bordering at least partially the first LED, the first transition area including a plurality of first transition nanowires, the device being characterised in that the first transition nanowires have first transition diameters and/or a first transition array step varying progressively when moving away from the first LED.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.