Microelectronic devices including oxide material between decks thereof, and related memory devices
US12310024B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 9, 2024 |
| Grant date | May 20, 2025 |
| Priority date | — |
| Expiry date | Feb 9, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/35
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A microelectronic device includes decks comprising alternating levels of a conductive material and an insulative material, the decks comprising pillars including a channel material extending through the alternating levels of the conductive material and the insulative material, a conductive contact between adjacent decks and in electrical communication with the channel material of the adjacent decks, and an oxide material between the adjacent decks, the oxide material extending between an uppermost level of a first deck and a lowermost level of a second deck adjacent to the first deck. Related electronic systems and methods of forming the microelectronic device and electronic systems are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.