Andrew Bicksler
44Patents
8h-index
30Co-inventors
75Inventor score
Filing activity: Jan 30, 2001 → Feb 9, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7212435B2 | Minimizing adjacent wordline disturb in a memory device | Physics | 38 | Expired |
| US6798699B2 | Flash memory device and method of erasing | Physics | 25 | Expired |
| US9437604B2 | Methods and apparatuses having strings of memory cells including a metal source | Electricity | 17 | Active |
| US7272039B2 | Minimizing adjacent wordline disturb in a memory device | Physics | 16 | Expired |
| US6563741B2 | Flash memory device and method of erasing | Physics | 16 | Expired |
| US8228735B2 | Memory array having memory cells coupled between a programmable drain select gate and a non-programmable source select gate | Physics | 15 | Active |
| US8619474B2 | Data line management in a memory device | Physics | 11 | Active |
| US7257024B2 | Minimizing adjacent wordline disturb in a memory device | Physics | 10 | Expired |
| US8450789B2 | Memory array with an air gap between memory cells and the formation thereof | Electricity | 7 | Active |
| US8243522B2 | NAND memory programming method using double vinhibit ramp for improved program disturb | Physics | 7 | Active |
| US6830975B2 | Method of forming field effect transistor comprising at least one of a conductive metal or metal compound in electrical connection with transistor gate semiconductor material | Electricity | 6 | Expired |
| US8390051B2 | Methods of forming semiconductor device structures and semiconductor device structures including a uniform pattern of conductive lines | Electricity | 6 | Active |
| US8304309B2 | Select gates for memory | Electricity | 5 | Active |
| US8853769B2 | Transistors and semiconductor constructions | Electricity | 5 | Active |
| US8716084B2 | Memory array with an air gap between memory cells and the formation thereof | Electricity | 4 | Active |
| US8729708B2 | Semiconductor device structures and memory devices including a uniform pattern of conductive material | Electricity | 3 | Active |
| US8223561B2 | Data line management in a memory device | Physics | 2 | Active |
| US11127751B2 | Back gates and related apparatuses, systems, and methods | Electricity | 1 | Active |
| US9135998B2 | Sense operation flags in a memory device | Emerging Cross-Sectional Technologies | 1 | Active |
| US7978511B2 | Data line management in a memory device | Physics | 1 | Active |
| US8605509B2 | Data line management in a memory device | Physics | 0 | Active |
| US7271064B2 | Method of forming a field effect transistor using conductive masking material | Electricity | 0 | Expired |
| US9613978B2 | Methods of forming semiconductor constructions | Electricity | 0 | Active |
| US10497707B2 | Semiconductor constructions which include metal-containing gate portions and semiconductor-containing gate portions | Electricity | 0 | Active |
| US11869590B2 | Memory devices including gate leakage transistors | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.