Three-dimensional memory devices and methods for forming the same

US12310025B2 · kind B2 · utility

Assignee

• YANGTZE MEMORY TECHNOLOGIES CO., LTD. · CN

Inventors

• Zongke Xu · 红钢城街道, CN
• Bin Yuan · 红钢城街道, CN
• Xiangning Wang · 红钢城街道, CN
• Qiangwei Zhang · 红钢城街道, CN

Key dates

• Filing date: Feb 28, 2024
• Grant date: May 20, 2025
• Expiry date: Feb 28, 2044

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B43/50

Abstract

A three-dimensional (3D) memory device includes a staircase, a plurality of contacts, a plurality of groups of support structures, and a fourth support structure between adjacent groups of support structures through the staircase. The plurality of groups of support structures are arranged in a first direction. Each of the groups of support structures includes three support structures. Projections of the three support structures form a triangular shape in a plane parallel to the first direction. The plurality of contacts each is surrounded by a respective group. A projection of one of the contacts overlaps with the triangular shape of the respective group.