Multi-layer ovonic threshold switch (OTS) for switching devices and memory devices using the same
US12310031B2 · kind B2 · utility
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Key dates
| Filing date | Jul 8, 2022 |
| Grant date | May 20, 2025 |
| Priority date | — |
| Expiry date | Dec 26, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8825
Abstract
A switching device is provided. The device includes a first electrode, a second electrode and a multi-layer ovonic threshold switch (OTS) between the first and second electrodes, the multi-layer OTS including a first layer and a second layer. The first layer and the second layer are different compositions, and the second layer includes germanium Ge and nitrogen N. The switching device can be thermally stable to temperatures over 600° C. Further, the switching device can be used in three-dimensional (3D) cross-point memory.
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