IGBT device and method of making the same

US12310069B2 · kind B2 · utility

Assignee

• Shanghai Huahong Grace Semiconductor Manufacturing Corporation · CN

Inventors

• Jia Pan · Shanghai, CN
• Tongbo ZHANG · Shanghai, CN
• Yiping YAO · Shanghai, CN
• Jiye YANG · Shanghai, CN
• Junjun XING · Shanghai, CN
• Chong Chen · Singapore, SG
• Xuan Huang · Beijing, CN
• Peng SUN · Beijing, CN

Key dates

• Filing date: Sep 12, 2022
• Grant date: May 20, 2025
• Expiry date: Jan 23, 2044

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02B70/10
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

An IGBT device and a method for manufacturing it, the device includes a super junction structure that has several N-type pillars and P-type pillars arranged alternately; a cell unit that is located in an N-type epitaxial layer, and the N-type epitaxial layer is located above the N-type substrate; each cell unit includes a trench gate, a P-type body region, and a source region; an N-type carrier injection layer, the N-type carrier injection layer is located in the N-type epitaxial layer, and the N-type carrier injection layer is spaced apart from the N-type substrate by the N-type epitaxial layer; the bottom of the P-type body region is located in the N-type carrier injection layer; and a collector region that is located at the bottom of the N-type substrate.