Monolithic growth of epitaxial silicon devices via co-doping

US12310086B2 · kind B2 · utility

Assignees

• Lawrence Livermore National Security, LLC · US
• The United States of America as represented by the Secretary of the Army · US
• BAE Systems Land & Armaments L.P. · US

Inventors

• Caitlin Anne Chapin · Fremont, US
• Lars Voss · Livermore, US
• Luis M. Hernandez · Orlando, US
• Mark Rader · Decatur, US

Key dates

• Filing date: Oct 17, 2022
• Grant date: May 20, 2025
• Expiry date: Mar 17, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D8/70

Abstract

In one general embodiment, a structure includes a first diode, comprising: a first layer having a first type of dopant, and a second layer above the first layer, the second layer having a second type of dopant that is opposite to the first type of dopant. A second diode is formed directly on the first diode. The second diode comprises a first layer having a third type of dopant and a second layer above the first layer of the second diode, the second layer of the second diode having a fourth type of dopant that is opposite to the third type of dopant. In another general embodiment, a process includes a repeated sequence of growing a first layer having a first type of electrically active dopant and growing a second layer having a second type of electrically active dopant that is opposite to the first type of dopant.