Optoelectronic device and manufacturing method
US12310156B2 · kind B2 · utility
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Key dates
| Filing date | Sep 30, 2024 |
| Grant date | May 20, 2025 |
| Priority date | — |
| Expiry date | Sep 30, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H29/852
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An optoelectronic device includes, in a stack, an emitting layer having optically active structures, configured to emit or receive radiation, a sensitive layer having at least one structure having a temperature resistance below a temperature Tmax below 200° C., a bond layer, and a transparent support layer. The bond layer is based on an inorganic low temperature bonding material. The bond layer also has cavities directly in line with the optically active structures, between the transparent support layer and the sensitive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.