Surface treatment method, method for producing semiconductor substrate including the surface treatment method, composition for surface treatment, and system for producing semiconductor substrate including the composition for surface treatment
US12312499B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 4, 2022 |
| Grant date | May 27, 2025 |
| Priority date | — |
| Expiry date | May 12, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31053
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
The present invention provides a unit that can sufficiently remove a residue containing inorganic oxide abrasive grains present on the surface of a polished object to be polished containing silicon oxide. One aspect of the present invention relates to a surface treatment method for reducing a residue containing inorganic oxide abrasive grains on a surface of a polished object to be polished containing silicon oxide using a composition for surface treatment, wherein the composition for surface treatment contains a zeta potential adjusting agent having an sp value of more than 9 and 11 or less and having a negatively charged functional group and a dispersing medium, and the surface treatment method includes negatively controlling a zeta potential of the silicon oxide and controlling a zeta potential of the inorganic oxide abrasive grains to −30 mV or less using the surface treatment composition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.