Resist underlayer film-forming composition
US12313972B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 20, 2020 |
| Grant date | May 27, 2025 |
| Priority date | — |
| Expiry date | Jun 20, 2041 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC08L2203/20
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A resist underlayer film forming composition contains a reaction product of an aromatic compound (A) having 6 to 60 carbon atoms and a compound represented by formula (B), and a solvent. (In the formula, X represent an oxygen atom or a nitrogen atom; Y represents a single bond, an oxygen atom or a nitrogen atom; X and Y may combine with each other to form a ring; and each of R1, R2, R3 and R4 independently represents a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, a cyclic alkyl group having 3 to 8 carbon atoms or an aromatic group having 6 to 10 carbon atoms; provided that R2 is present only in cases where X is a nitrogen atom, and R4 is present only in cases where Y is a nitrogen atom.)
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.