Memristor device, method of fabricating thereof, synaptic device including memristor device and neuromorphic device including synaptic device
US12314841B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Sep 5, 2023 |
| Grant date | May 27, 2025 |
| Priority date | — |
| Expiry date | Jan 3, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/151
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Disclosed are a memristor device, a method of fabricating the same, a synaptic device including a memristor device, and a neuromorphic device including a synaptic device. The disclosed memristor device may comprise a first electrode, a second electrode disposed to be spaced apart from the first electrode; and a resistance changing layer including a copolymer between the first electrode and the second electrode. The copolymer may be a copolymer of a first monomer and a second monomer, and the first polymer formed from the first monomer may have a property that diffusion of metal ions is faster than that of the second polymer formed from the second monomer. The second polymer may have a lower diffusivity of metal ions as compared with the first polymer. The first monomer may include vinylimidazole (VI). The second monomer may include 1,3,5-trivinyl-1,3,5-trimethylcyclotrisiloxane (V3D3). The copolymer may include p(V3D3-co-VI).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.