Plasma processing method and plasma processing apparatus
US12315698B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 6, 2021 |
| Grant date | May 27, 2025 |
| Priority date | — |
| Expiry date | Jun 16, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing apparatus includes: a plasma processing chamber; a substrate support disposed in the plasma processing chamber; a source RF generator coupled to the plasma processing chamber, and configured to generate a pulse source RF signal including a plurality of source cycles; and a bias RF generator coupled to the substrate support, and configured to generate a pulse bias RF signal. A transition timing to the bias operating state in each bias cycle is delayed with respect to a transition timing to the source operating state in a corresponding source cycle, the source non-operating period overlaps with the bias non-operating period, and the bias operating period in each bias cycle overlaps with the source operating period in the next source cycle.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.