Plasma processing apparatus and methods of manufacturing semiconductor device using the same
US12315703B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 9, 2021 |
| Grant date | May 27, 2025 |
| Priority date | — |
| Expiry date | Feb 15, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A plasma processing apparatus includes a substrate chuck having a first region configured to support a substrate and a second region located at a lower level, a focus ring disposed on the second region and surrounding an outer circumferential surface of the first region, a driving unit disposed below the focus ring, the driving unit including a driving source and a driving shaft in contact with a lower surface of the focus ring and configured to adjust a position of an upper surface of the focus ring by a first distance value, a chromatic confocal sensor disposed below the focus ring and configured to measure a second distance value in which the lower surface of the focus ring is moved by irradiating measurement light to the lower surface of the focus ring, and a control unit calculating an error value between the first distance value and the second distance value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.