Substrate treating method and substrate treating apparatus
US12315743B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 21, 2023 |
| Grant date | May 27, 2025 |
| Priority date | — |
| Expiry date | Aug 21, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/683
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The apparatus includes a chamber having a treating space for treating the substrate, a substrate support unit for supporting the substrate in the treating space, a gas supply unit for supplying gas into the treating space, and a plasma source for generating plasma from the gas supplied to the treating space, wherein the gas supply unit includes a shower head unit disposed in a top portion of the chamber so as to face away the substrate support unit, wherein a plurality of discharge holes are defined in the shower head unit, wherein the gas is discharged through the discharge holes, and a gas block for supplying the gas to the shower head unit, wherein the shower head unit has partitioned regions defined therein communicating with the discharge holes respectively, wherein the gas block supplies the gas to the partitioned regions at different flow rates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.