Semiconductor device
US12315792B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 21, 2022 |
| Grant date | May 27, 2025 |
| Priority date | — |
| Expiry date | Sep 12, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53295
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a substrate having an active region, a first insulating layer on the substrate, a second insulating layer on the first insulating layer, an etch stop layer between the first insulating layer and the second insulating layer, a via contact in the first insulating layer and electrically connected to the active region, an interconnection electrode in the second insulating layer and electrically connected to the via contact, a conductive barrier layer on a side surface and a lower surface of the interconnection electrode and having an extension portion extending to a partial region of a side surface of the via contact, and a side insulating layer on a side region of the via contact below the extension portion of the conductive barrier layer, the side insulating layer including the same material as a material of the etch stop layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.