Method of fabricating layers of single-crystal material
US12316295B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 23, 2021 |
| Grant date | May 27, 2025 |
| Priority date | — |
| Expiry date | May 11, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H2003/025
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A process for fabricating a component includes an operation of transferring at least one layer of one or more piezoelectric or pyroelectric or ferroelectric materials forming part of a donor substrate to a final substrate, the process comprising a prior step of joining the layer to a temporary substrate via production of a fragile separating region between the donor substrate of single-crystal piezoelectric or pyroelectric or ferroelectric material and the temporary substrate, the region comprising at least two layers of different materials in order to ensure two compounds apt to generate an interdiffusion of one or more constituent elements of at least one of the two compounds make contact, the fragile region allowing the temporary substrate to be separated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.