Semiconductor device and method for fabricating the same
US12317471B2 · kind B2 · utility
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Key dates
| Filing date | Apr 1, 2022 |
| Grant date | May 27, 2025 |
| Priority date | — |
| Expiry date | Jun 28, 2043 |
Classification
- Technology area (CPC —)General
Abstract
A method for fabricating a semiconductor device includes: forming an etch stopper pad including a sacrificial plug over a substrate and a sacrificial pad over the sacrificial plug; forming an etch target layer over the etch stopper pad; forming a plurality of openings by etching the etch target layer and stopping the etching at the sacrificial pad; forming an air gap by removing the sacrificial pad and the sacrificial plug through the openings; and forming a gap-fill layer that fills the openings and the air gap.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.