Patent · US Active

Memory array

US12317510B2 · kind B2 · utility

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0References
19Claims
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Assignee

Inventors

Key dates

Filing dateFeb 16, 2022
Grant dateMay 27, 2025
Priority date
Expiry dateDec 13, 2043

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C7/18
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A memory array includes at least one strap region, at least two sub-arrays, a plurality of staggered, dummy magnetic storage elements, and a plurality of bit line structures. The strap region includes a plurality of source line straps and a plurality of word line straps. The two sub-arrays include a plurality of staggered, active magnetic storage elements. The two sub-arrays are separated by the strap region. The staggered, dummy magnetic storage elements are disposed within the strap region. The bit line structures are disposed in the two sub-arrays, and each of the bit line structures is disposed above and directly connected with at least one of the staggered, active magnetic storage elements.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.