Semiconductor device and power switching system including the same
US12317536B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 3, 2021 |
| Grant date | May 27, 2025 |
| Priority date | — |
| Expiry date | Jun 23, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/127
Abstract
A semiconductor device includes: a semiconductor substrate including a first surface and a second surface facing each other and including a first semiconductor material; a plurality of fin structures upwardly extending on the first surface of the semiconductor substrate, spaced apart from each other by a plurality of trenches, and including the first semiconductor material as the semiconductor substrate; an insulating layer on the first surface of the semiconductor substrate filling at least a portion of the plurality of trenches; a gate electrode layer between the plurality of fin structures and surrounded by the insulating layer; a first conductive layer covering the plurality of fin structures; a second conductive layer on the second surface of the semiconductor substrate; and a shield layer between the gate electrode layer and the semiconductor substrate, surrounded by the insulating layer, and electrically connected to the first conductive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.