Semiconductor device structure and method for forming the same
US12317567B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 11, 2022 |
| Grant date | May 27, 2025 |
| Priority date | — |
| Expiry date | Aug 20, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method for forming a semiconductor device structure is provided. The method includes forming a gate stack over a substrate. The method includes forming a spacer structure over a sidewall of the gate stack. The method includes forming a source/drain structure in and over the substrate, wherein a portion of the spacer structure is between the source/drain structure and the gate stack. The method includes partially removing the outer layer, wherein a first lower portion of the outer layer remains between the source/drain structure and the gate stack. The method includes partially removing the middle layer, wherein a second lower portion of the middle layer remains between the source/drain structure and the gate stack.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.