Integrated circuit devices including a metal resistor and methods of forming the same
US12317582B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 10, 2021 |
| Grant date | May 27, 2025 |
| Priority date | — |
| Expiry date | Jun 17, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Integrated circuit devices including a metal resistor and methods of forming the same are provided. The integrated circuit devices may include a substrate including a first surface and a second surface that is opposite the first surface and is parallel to the first surface, a transistor including a gate electrode, first and second resistor contacts that are spaced apart from each other in a horizontal direction that is parallel to the second surface of the substrate, and a metal resistor. The first surface of the substrate may face the gate electrode. The metal resistor may include a third surface and a fourth surface that is parallel to the third surface and the second surface of the substrate, and the fourth surface of the metal resistor may be closer to the second surface than the first surface and contacts the first and second resistor contacts.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.