Method for manufacturing a composite structure comprising a thin layer made of monocrystalline SiC on a carrier substrate made of SiC
US12320031B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 12, 2021 |
| Grant date | Jun 3, 2025 |
| Priority date | — |
| Expiry date | Apr 16, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02658
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for manufacturing a composite structure comprising a thin layer made of monocrystalline silicon carbide arranged on a carrier substrate made of silicon carbide, the method comprising: a) a step of providing a donor substrate made of monocrystalline SiC, the donor substrate comprising a donor layer produced by epitaxial growth on an initial substrate, the donor layer exhibiting a density of crystal defects that is lower than that of the initial substrate; b) a step of ion implantation of light species into the donor layer, in order to form a buried brittle plane delimiting the thin layer between the buried brittle plane and a free face of the donor layer; c) a succession of n steps of formation of carrier layers, with n greater than or equal to 2, the n carrier layers being arranged on the donor layer successively on one another and forming the carrier substrate, each step of formation comprising a chemical vapor deposition, at a temperature of between 400° C. and 1100° C., in order to form a carrier layer made of polycrystalline SiC, the n chemical vapor depositions being carried out at n different temperatures; d) a step of separation along the buried brittle plane, in or…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.