Silicon carbide wafer and method of preparing the same
US12320033B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 17, 2021 |
| Grant date | Jun 3, 2025 |
| Priority date | — |
| Expiry date | Feb 24, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The method of preparing a silicon carbide ingot includes: disposing a raw material and a silicon carbide seed crystal to be separated in a reactor having an internal space; adjusting a temperature, a pressure, and an atmosphere of the internal space for sublimating the raw material and growing the silicon carbide ingot on the silicon carbide seed crystal; and cooling the reactor and retrieving the silicon carbide ingot, wherein the adjusting proceeds in a first inert gas atmosphere having a flow quantity of 100 sccm to 300 sccm, the cooling proceeds in a second inert gas atmosphere having a flow quantity of 1 sccm to 250 sccm, and the reactor has a thermal conductivity of 120 W/mK or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.