Memory device, programming method of memory device, and memory system
US12322449B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 6, 2023 |
| Grant date | Jun 3, 2025 |
| Priority date | — |
| Expiry date | Dec 13, 2043 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3459
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method includes performing a programming operation on the memory cell using incremental step pulse programming. The programming operation includes applying one or more first voltage steps to the word line using a first step value to increase a threshold voltage of the memory cell toward a programming state. The programming operation also includes determining a quantity of memory cells that have a threshold voltage between first and second verification voltages. The second verification voltage is less than the first verification voltage and outside of a range of threshold voltages corresponding to the programming state. The programming operation also includes determining a step adjustment value based on the determining of the quantity. The programming operation also includes adjusting the first step value using the step adjustment value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.