Patent · US Active

Reactor with centering pin for epitaxial deposition

US12322644B2 · kind B2 · utility

0Cited by
26References
36Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 27, 2021
Grant dateJun 3, 2025
Priority date
Expiry dateJan 3, 2042

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/68792
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A substrate reactor with centering pin for epitaxial deposition includes a vacuum chamber and a tube configured to rotate in the vacuum chamber around a tube geometrical center axis. A substrate carrier forming a pocket dimensioned for holding a substrate on a top surface includes an aperture that is centrally located on a bottom surface. The substrate carrier is positioned on and in contact with a top surface of the tube. A centering pin is positioned along a geometrical center axis of rotation of the substrate carrier. The centering pin has a first end positioned in the aperture on the bottom surface of the substrate carrier and a second end fixed inside the reactor so that the substrate carrier rotates around the geometrical center axis of the substrate carrier independent of the geometrical center axis of the tube.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.