Method for fabricating physically unclonable function device
US12322645B2 · kind B2 · utility
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Key dates
| Filing date | Mar 7, 2022 |
| Grant date | Jun 3, 2025 |
| Priority date | — |
| Expiry date | Jun 22, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/573
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a physically unclonable function (PUF) device includes the steps of first defining a PUF cell region on a substrate and then performing a process to form a defect on the PUF cell region. Preferably, the formation of the defect could be accomplished by forming a shallow trench isolation (STI) on the substrate, forming a gate material layer on the substrate and the STI, patterning the gate material layer to form a first gate material layer and a second gate material layer, and then forming an epitaxial layer between and connecting the first gate material layer and the second gate material layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.