High-side semiconductor switch with over-current protection
US12323135B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 13, 2023 |
| Grant date | Jun 3, 2025 |
| Priority date | — |
| Expiry date | Aug 22, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2217/0063
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A circuit may be used as an intelligent semiconductor switch. The circuit includes a high-side power transistor having a load current path coupled between a supply node and an output node, which is configured to provide, during operation, a load current to a load. The circuit further includes a gate driver circuit coupled to a control electrode of the power transistor, and a first stage of an overcurrent protection circuit coupled to the control electrode of the power transistor and configured to drive the control electrode such that a voltage drop across the load current path of the power transistor increases upon detection that the load current has reached a first threshold value. A second stage of the overcurrent protection circuit is coupled to the control electrode of the power transistor and configured to drive the control electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.