Resistive memory device
US12324166B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 5, 2022 |
| Grant date | Jun 3, 2025 |
| Priority date | — |
| Expiry date | Apr 6, 2044 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/72
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A resistive memory device including a resistive memory pattern; and a selection element pattern electrically connected to the resistive memory pattern, the selection element pattern including a chalcogenide switching material and at least one metallic material, the chalcogenide switching material including germanium, arsenic, and selenium, and the at least one metallic material including aluminum, strontium, or indium, wherein the selection element pattern includes an inhomogeneous material layer in which content of the at least one metallic material in the selection element pattern is variable according to a position within the selection element pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.