Power semiconductor device and method

US12324186B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Edward Fuergut · Nuremberg, DE
• Philipp Koch · Villach, AT
• Stephan Pindl · Ergoldsbach, DE
• Hans-Joachim Schulze · Taufkirchen, DE

Key dates

• Filing date: Aug 27, 2020
• Grant date: Jun 3, 2025
• Expiry date: Aug 27, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/0297

Abstract

A power semiconductor device includes a semiconductor body having a front side surface, and a first passivation layer arranged above the front side surface. The first passivation layer is a polycrystalline diamond layer.