Semiconductor devices with air gaps and the method thereof
US12324218B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 20, 2021 |
| Grant date | Jun 3, 2025 |
| Priority date | — |
| Expiry date | Oct 29, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/251
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method includes providing a semiconductor structure including a device fin protruding from a substrate, forming a dummy gate stack over the device fin, forming a first spacer over the device fin and the dummy gate stack, forming a second spacer over the first spacer, forming a dielectric feature adjacent to the second spacer, and replacing the dummy gate stack with a metal gate stack. Thereafter, the method removes the second spacer, thereby forming an air gap between the first spacer and the dielectric feature and wrapping around the device fin. The method then forms a sealing layer over the first spacer and the dielectric feature, thereby sealing the air gap.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.